Atomic layer etching: What for? ROCESS
Authors: Dr Mike Cooke and Andy Goodyear, Oxford Instruments Plasma Technology
Atomic layer etching promises to improve the quality of GaN-based HEMTs and eradicate the damage associated with high etching rates ALL THE LATEST MARKET TRENDS from the Internet- of-Things to mobile technology and driverless cars have a common thread: hi tech on the move. This is propelling the industry along a well-trodden path of ever greater functionality, in a smaller and smaller space, while consuming less and less energy. Progress on all these fronts has hinged on the growth of ever thinner films and smaller device features. To do this, there is a need to create and control materials with ever increasing accuracy. For thin-film deposition, a technology that delivers the goods is atomic layer deposition (ALD). In comparison, conventional plasma etching, which is based on a continuous ‘analogue’ process, fails to offer the same degree of control. But atomic layer etching (ALE) could change all that and propel plasma etching into its ‘digital’ age.
Now published in the Compound Semiconductor (CS) Volume 24 issue 3. Read the full article: plasma.oxinst.com/ALE
NEW improved process for 2D MoS 2 using Raman metrology Authors: Elisha Mercado, Jonathan Moffat, Oxford Instruments Asylum Research Dr Mike Cooke, Dr Ravi S Sundaram, Oxford Instruments Plasma Technology fabrication
two-dimensional (2D) materials have spurred research into large area fabrication through vapour deposition and etching. However, robust and efficient non destructive characterization techniques are required in order to reliably produce good quality uniform layers. Here, we present a Raman spectroscopy approach for characterization of the quality and a systematic study of the impact of process parameters for the production of 2D MoS 2 layers. We also present the application of this characterization technique for controlled layer by layer etching of multilayer MoS 2 . Read the full article: bit.ly/2w9PKey
Scientists at Plasma Technology have studied the process of depositing two dimensional (2D) layers of Molybdenum disulfide (MoS 2 ) demonstrating quality control using Raman spectroscopy. In a paper published in IOP Journal of Physics D: Applied Physics, we take an in depth look at using the defect activated Raman signature, to study the influence of various process parameters as well as to improve film quality. We also show that our atomic layer etching process for MoS 2 does not induce defects in the underlying layers. Promising electronic and optoelectronic properties of
6 Summer 2018
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