100
Plasma Pro 100
Plasma Pro 100
Extensive process library
Wide temperature range
Our extensive process library supports a wide range of applications for etch and deposition. Our processes are backed by guarantees to ensure rapid start-up during installation. The Plasma Pro 100 range of etch and deposition tools can be fitted with a variety of substrate electrodes, enabling processes over a wide temperature range.
Nanoscale & advanced etch Deposition • Deep RIE of Silicon • Compound semiconductor
• Dielectric materials • Metal Nitrides • Metal Oxides • DLC
For our full range of processes visit: www.oxinst.com/plasma
• Metals • Oxides • Organic materials
Etching Two electrodes are available for etching:
• A wide temperature range electrode (-150°C to +400°C) which can be cooled by liquid nitrogen, a fluid re-circulating chiller or resistively heated. An optional blow out and fluid exchange unit can automate the process of switching modes • A fluid controlled electrode fed by a re-circulating chiller unit
Ultra high selectivity cryo-silicon etch
GaAs/AlGaAs multilayer etch
Deep Silicon Bosch etch
High aspect ratio high quality nanoscale SiO 2 etch
Un-clamped InP etching (Cl 2
/Ar/N
)
Redeposition-free hot chemical gold etch
2
Wide temperature range electrode (-150 to +400°C) Fluid cooled etch electrode
Up to 400°C for standard IC compatible PECVD processes Up to 700°C for standard PECVD processes plus Si Nanowires Up to 1000°C for standard PECVD processes plus Si Nanowires and polySi CVD Up to 1200°C for growing graphene and 2D
Deposition Two electrodes are available for deposition: • The ICP CVD tool electrode gives high quality films from room temperature to 400°C • PECVD tools can be fitted with resistive heated electrodes with capability up to 400°C or 1200°C
at <100 ° C
ICP CVD TEOS SiO 2
Low stress SiN film (400nm)
High rate SiO 2
PECVD
Graphene grown on Cu foil sub- strates
2D Boron Nitride
Aligned ZnO nanorods. Courtesy Uni Cambridge
Si nanowires using Au NP as catalyst
2 Plasma Pro 100
Plasma Pro 100 3
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