Solution-processed electronics based on BiOI Vaidehi Lapalikar 1 , Preetam Dacha 2,3 , Prof. Dr. Stefan C. B. Mannsfeld 2,3 , Prof. Dr. Michael Ruck 1,4 1 Faculty of Chemistry and Food Chemistry, TU Dresden, Germany, 2 Faculty of Electrical and Computer Engineering, TU Dresden, Germany, 3 Center for Advancing Electronics Dresden (cfaed), TU Dresden, Germany, 4 Max Planck Institute for Chemical Physics of Solids (MPI-CPfS), Dresden, Germany Bismuth based materials have been studied extensively in the recent years as environmentally benign alternatives for lead halide perovskites in (opto)electronic devices due to their reported theoretical exceptional optical and electronic properties. [1,2] Owing to the superior ambient, thermal and chemical stability of bismuth chalcogenide halides compared to lead-based perovskites, these materials have the potential to be engineered into high performing (opto)electronic devices. [3] An exemplary material from this class is bismuth oxide iodide BiOI, which is investigated in this work, for the first time, in a field-effect transistor (FET) configuration in an ambient, solution processed manner. We study BiOI as part of a hybrid system with p-type organic semiconductors (OSCs), with the end goal of utilizing its optical properties in photoresponsive electronics. Organic semiconductors (OSCs) are relatively soft materials and allow formation of a smooth contact at the interface. Hence in this study, we use multiple p-type OSCs that are known for their superior performance in solution-processed films for fabricating bilayer heterojunctions with “as-synthesized” BiOI thin films and analyze the varied device characteristics of the resulting FETs. Owing to the optical and chemical properties of BiOI now integrated in to functional devices, the best performing heterojunction FETs could be explored for applications in photodetectors, phototransistors, chemical sensors, etc. References 1. A. M. Ganose, C. N. Savory, D. O. Scanlon, Chem. Commun. 2017 , 53, 20. 2. L. C. Lee, T. N. Huq, J. L. MacManus-Driscoll, R. L. Z. Hoye, APL Mater. 2018 , 6, 084502. 3. T. N. Huq, L. C. Lee, L. Eyre, W. Li, R. A. Jagt, C. Kim, S. Fearn, V. Pecunia, F.Deschler, J. L. MacManus-Driscoll, R. L. Z. Hoye, Adv. Funct. Mater. 2020 , 30, 1909983.
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