TXRF 3760
COMPACT TXRF SPECTROMETER | Wafer surface contamination
SYSTEM PARAMETERS
SPECIFICATIONS
Technique
Total reflection X-ray fluorescence (TXRF)
Rapid, non-destructive measurement of trace elemental surface contamination (Na – U) 3-beam TXRF system with electronically cooled detector and automatic optics exchange
Benefit
Technology
High-power X-ray source (9 kW rotating anode) XYθ sample stage In-vacuum wafer robotic transfer system Accepts up to 200 mm wafers
Core attributes
Full wafer mapping ( SWEEPING-TXRF ) Zero edge exclusion ( ZEE-TXRF ) SMIF handling SECS/GEM communication software
Core features
Optional
Core dimensions
1000 (W) x 1760 (H) x 948 (D) mm
Measurement Results
Quantitative result, spectrum chart, color contour map, mapping table
SEQUENTIAL WDXRF SPECTROMETER | Analytical flexibility for process R&D and low-volume manufacturing and high-product-mix
AZX 400
SYSTEM PARAMETERS
SPECIFICATIONS
Technique
Sequential wavelength dispersive X-ray fluorescence
Flexibility to measure a variety of sample types, including 50 - 300 mm wafers, coupons, and sputtering targets (up to 30 kg) Analytical flexibility to measure elements from Be to U, well-suited for process R&D and low-volume, high product mix environment score 4 kW sealed X-ray tube, Sequential type goniometer, Primary beam filter; Measurement spot sizes 30, 20, 10, 1, and 0.5 mm (diameter)
Benefit
Technology
Core attributes
SQX (Scan Quant X) software Diffraction peak interference rejection
Core features
Wafer Loader CCD Camera Sample view camera
Optional
Core dimensions
1376 (W) x 1710 (H) x 890 (D) mm
Measurement Results
Film thickness and Composition
WDA 3650
SIMULTANEOUS WDXRF SPECTROMETER | In-line high-volume semiconductor manufacturing
SYSTEM PARAMETERS SPECIFICATIONS Technique
Simultaneous wavelength dispersive X-ray fluorescence
Benefit
Thickness and composition of multi- layer stacks for ≤ 200 mm wafers
Technology
4kW, Rh-anode WDXRF with XYθ sample stage
20 channels max. fixed type ( ₄ Be ～ ₉₂ U) scanning type ( ₂₂ Ti ～ ₉₂ U) CE marked, GEM/SECS, SEMI S2
Core attributes
AD-Boron channel for greater sensitivity Auto-calibration function with C-to-C autoloader
Core features
Optional
Auto wafer loader
Core dimensions
1120 (W) x 1450 (H) x 890 (D) mm
Film thickness Composition
Measurement Results
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