Growth and properties of 2H-Si microneedles using HVPE Kyoung Hwa Kim 1 , Suhyun Mun 1 , Seonwoo Park 1 , Jeongbin Heo 1 , Mingyeong Jo 1 , Jae Hak Lee 1, 2 , Hyung Soo Ahn 1, * , Min Yang 1 , Young Tea Chun 1 , Won Jae Lee 3 , Sang-Mo Koo 4, 1 Department of Nano Semiconductor, Korea Maritime and Ocean University, Busan 49112, South Korea. 2 LNBS Co., Ltd. Busan 48731, South Korea. 3 Department of Advanced Materials Engineering, Dong-Eui University, Busan 47340, South Korea. 4 Department of Electronic Materials Engineering, Kwangwoon University, Seoul 01897, South Korea. E-mail: kimkh@kmou.ac.kr Nano-sized materials have unique electrical, magnetic, optical, and mechanical properties different from those of bulk materials, enabling the development of innovative technologies in various industries. However, most studies are limited to nano-phenomena, and more research is needed to understand the effect of nano-phenomena on the growth of micro-sized crystals. We obtained a straight Si microneedle with a longitudinal growth rate of 1.1 x 10 5 Å/s, which cannot be explained by conventional crystal growth. AlN nanowires are grown using AlCl and NH 3 at a high growth temperature of 1250 °C by HVPE method. When the NH 3 supply is stopping, AlCl forms Al membranes on the surface of the AlN nanowires. At this time, elliptical membranes are created by the Plateau- Rayleigh instability (PRI) principle in a very short time. And SiCl is absorbed by elliptical membranes to form Si droplets. The average spacing of the elliptical membranes is 4 µm, and about 10,000 elliptical membranes are formed in 0.166 sec to form a 40 mm Si microneedle. This result almost agrees with the PRI condensation time of 0.156 sec for water droplets observed by Zheng et al [1]. Si elements are absorbed by the elliptical membranes to form crystals and grow straight Si microneedle with a growth rate of 1.1 x 10 5 Å/s. This method provides a new approach to understanding how nano phenomena contribute to micro-sized crystal growth. Acknowledgment This research was supported by the Korea Evaluation Institute of Industrial Technology (KEIT) grant funded by the Korea government (MOTIE) (RS-2022-00154720, Technology Innovation Program Development of next-generation power semiconductor based on Si-on-SiC structure). References 1. Zheng, Y. et al. Directional water collection on wetted spider silk. Nature 463, 640-643 (2010).
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