Se diffusion in CdSeTe photovoltaics Jacob Frank Leaver and Jonathan D. Major University of Liverpool, UK
CdSe x Te 1-x (CST) has emerged as an important component of the absorber in CdTe photovoltaics, where the Se content is graded so that x is highest at the front (light-facing) side of the absorber and decreases towards pure CdTe at the back. Due to band-bowing effects the bandgap of the CST in these devices is lower than CdTe, extending the absorption onset further into the infrared and increasing the short-ciruit current 1,2. There is also evidence that Se passivates defects in this material, reducing nonradiative recombination and increasing the open-circuit voltage 3,4 . This work investigates the effect of device fabrication and processing conditions on Se diffusion in CST devices, and the resulting impact on device performance. References 1. N. Paudel and Y. Yan, Appl. Phys. Lett. , 2014, 105 , 183510 2. X. Zheng, D. Kuciauskas, J. Moseley, E. Colegrove, D. S. Albin, H. Moutinho, J. N. Duenow, T. Ablekim, S. P. Harvey, A. Ferguson and W. K. Metzger, APL Mater. , 2019, 7 , 071112 3. D. Kuciauskas, J. Moseley, P. Ščajev and D. Albin, Physica Status Solidi-R , 2020, 14 , 1-6 4. T. A. M. Fiducia, A. Howkins, A. Abbas, B. G. Mendis, A. Munshi, K. Barth, W. Sampath and J. M. Walls, Sol. Energ. Mat. Sol. C. , 2022, 238 , 111595
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