Powerful Proven Plasma
Delivering plasma processing solutions for high volume manufacturing of Silicon carbide (SiC) devices. With solutions for low damage etching of substrates to reduce defect density, controlled feature etch and surface passivation we provide device enabling results at the right Cost of Ownership (CoO).
We have developed an innovative set of plasma process solutions designed to enable maximum SiC device performance.
Are you creating the best silicon carbide substrates?
We're supplying leading-edge plasma systems to Tier 1 substrate suppliers for pre-epi surface quality enhancement.
Removing damaged layers
High control of edge profile and surface roughness limit concentration of electric fields and prevent low gate oxide breakdown. Process focus on controlling surface quality to obtain high interface quality with gate dielectric and minimize leakage.
Plasma surface etching
Chemo- mechanical polishing
Lapping & mechanical polishing
Wafer post-wire sawing
Ion implementation of n-type
Mask prep usually SiO 2 or PR PlasmaPro 100 PECVD & RIE
Surface preparation PlasmaPro 100 RIE
Plasma Etch of feature
Ion implant p-type
Discrete SiC Power Devices 2
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