Face Grinding Wheel for Semi-Conductor Wafer VitaNova
Grinding Wheel for Wafer Thickness Processing VitaNova Series
Wheel Line up
Grit Size
#325
#600
#1000
#1500
#2000
#2400
#3000
#4000
#6000
#8000 #10000
High Grain Retention ▶ High Ef ciency, Long Life High Abrasive Grain Dispersion ▶ Low-Damage Processing
Grain Size
44 µm 30 µm 15 µm 10 µm 7 µm 5 µm 3 µm 2 µm 1 µm 0.5 µm 0.3 µm
Masspower I A (P.3)
Masspower II B (P.4)
SiC
Si (Single Side Surface Grinding)
VRS/VRA
Premium (P.5)
V-Heart (P.5) Cell ed (P.5)
Si (Double Disk Surface Grinding)
VRS/VRA
Premium
Masspower (P.6)
LT/LN
VRS/VRA
Masspower (P.6)
GaN
MT (Metal Bond)
VRS/VRA
Masspower (P.6)
Sapphire
VRS/VRA
Premium
GaAs/InP
VRS/VRA
Premium
Quartz/Glass
Premium
VRS/VRA
AlN
Masspower
Semiconductor Wafer Machining Process
Slicing
Ingot
End Face Machining / Orientation Flat Marking
Beveling
Notch Processing
Surface Grinding
CMP
Laser Slicing
Package
Molding
Bonding
Dicing
Back Grinding
BEOL (Back end of Line)
EPI
1
2
For Rough Grinding SiC Wafers
VitaNova Masspower I A
For Finishing SiC Wafers
VitaNova Masspower II B
Contributes to Lower Machining Costs and Higher Machining Ef ciency
Contributes to Improved Machining Ef ciency Through Low-Load, Low-Wear Machining
As diameter of SiC wafers become larger, a demand for lower cost wheels for rough machining of wafer thickness will be required more. The vitri ed bond wheel “VitaNova Masspower I A” fulfills the market requirement of longer wheel life and a significant reduction in production costs by “increased retention” of the abrasive grain layer.
As SiC wafers become larger in diameter, further cost reduction and lower grinding resistance are required for wheels for wafer thickness processing. The vitri ed bond wheel “VitaNova Masspower II B” achieves the market requirements of long life and low grinding resistance by adopting a bond with high porosity and high grain retention. This will contribute to the further spread of SiC power devices. Features • Both 6-inch and 8-inch models have approximately 2.8 times longer tool life than conventional products. • Achieves better grinding with less load in both 6-inch and 8-inch compared with conventional spec. • Low-damage processing equivalent to lapped surfaces is achieved.
Features • Minimize the self-sharpening units to achieve long tool life and low-load processing
• Achieves less wear ratio of grinding wheel in both 6-inch and 8-inch compared with conventional spec. • Continuous machining at a feed rate of 1 µm/sec is achieved for both 6-inch and 8-inch machines.
Standard Speci cation
Standard Speci cation
φ 160–350
φ 160–350
Outside Diameter D (mm)
Outside Diameter D (mm)
D
D
W
W
Grain Layer Width W (mm)
3
Grain Layer Width W (mm)
3
Grain Layer Thickness X (mm) 5–10
Grain Layer Thickness X (mm) 3–10
H
H
Grit Size (Grain Size)
#325–#2400(44–5 µm)
Grit Size (Grain Size)
#6000–#10000 (1–0.3 µm)
Masspower I A Processing Mechanism
Example of SiC Wafer Processing: #8000 (Abrasive Grain Size: 0.5 µm)
Comparison with Conventional Products (Wheel Wear Rate and Spindle Load Current)
Masspower I A
Conventional
6-inch
8-inch
400
120
6
6
100
300
80
4
4
Minimized the Self-Sharpening Units
200
60
Self-Sharpening with Macro Fracture
40
2
2
100
SiC Wafer
SiC Wafer
20
0
0
0
0
Masspower II B Focus on Wear Resistance
Masspower II B Focus on Sharpness
Masspower II B Focus on Wear Resistance
Masspower II B Focus on Sharpness
Conventional Wheel
Conventional Wheel
Masspower II B Wafer Measurement Result After Processing Surface Roughness
Example of SiC Wafer Processing: #2000 (Abrasive Grain Size: 7 µm)
Surface Damage (TEM)
Grinding Distortion (EBSD)
Comparison with Conventional Products (Wheel Wear Rate and Spindle Load Current)
8-inch
6-inch
140
12
35
8
2–3 µm
70 nm
30
120
10
Grinding Masspower II B
7
25
100
8
20
80
6
6
15
60
Sa 1.3 nm
4
10
40
5
2
20
5
0
0
0
4
Masspower I A Feed Rate 1.0 µ ｍ /s
Masspower I A Feed Rate 0.6 µ ｍ /s
Masspower I A Feed Rate 1.0 µ ｍ /s
Masspower I A Feed Rate 0.6 µ ｍ /s
Conventional Wheel Feed Rate 0.6 µ ｍ /s
Conventional Wheel Feed Rate 0.6 µ ｍ /s
Grinding Conventional
4–5 µm
90 nm
Masspower I A Wafer Measurement Result After Processing Surface Roughness
Surface Damage (TEM)
Grinding Distortion (Raman Spectroscopy)
Sa 2.3 nm
7 µm
2–3 µm
Lapping
1 µm
70 nm
Sa 15nm
Sa 0.92 nm
3
4
For Finishing Si Wafers
VitaNova Premium
For LT/LN Wafers
VitaNova Masspower
Contributes to Improvement of Yield Ratio Through Low-Damage Processing
Contributes to Improvement of Wafer Quality by Low-Load Grinding
Ultra ne diamond grit and Ultra ne ceramics revolutionized the conventional wisdom of grinding wheels. Application of both acquired material technology and production technology has allowed Ultra ne grinding. Its effectiveness to reduce grinding damage in layers of brittle material such as polish-reduction of 12-inch silicon wafer and prevent cracks on a thin layer device wafer.
Because fragile LT wafers used as the SAW lter tend to get broken in processing, improving the processed surface roughness is required. "VitaNova Masspower", having a high porosity abrasive layer with excellent durability of sharpness, provides low-damage processing enabled by the added body shape with a function of ef ciently feeding to the grinding point.
Features • Extremely at, low damage, and smooth grinding possible. • Grinding of 12-inch silicon wafers as thin as 3 µm is possible. • Polished surface quality equivalent to polishing is possible.
Features • High porosity abrasive layer for long sharpness retention. • Newly developed body shape to uniformly supply grinding uid to grinding points. • Highly ef cient and high quality grinding.
Masspower
Conventional Wheel
φ 160–350
φ 160–350
Outside Diameter D (mm)
Outside Diameter D (mm)
12-inch Si Wafer / Comparison Data by Grain Size Grain Size
Grain Layer Width W (mm)
3
Grain Layer Width W (mm)
3
Self- Sharpening
Grain Layer Thickness X (mm) 5–10
Grain Layer Thickness X (mm) 3–10
1 µm
0.5 µm
LT
LT
#6000–#10000 (1–0.3 µm)
Grit Size (Grain Size)
#6000–#8000 (1–0.5 µm)
Grit Size (Grain Size)
Sa:2.8 nm PV:22 nm
Sa:1.5 nm PV:12 nm
By controlling the abrasive retention force, no signi cant force is required for self-sharpening Shedding with a small amount of abrasive
Signi cant force is required for self-sharpening Shedding by a group of abrasive grains
Comparison in LT Wafer Processing (Index with Conventional Product as 100)
Photo of the Fallen Bond
Surface Roughness
Magic Mirror Topography
Wafer Thinning Example (25 µm)
110
110
2 µm
50 µm
100
100
Grinding Wheel
Grinding Wheel
90
90
80
80
Surface Damage Depth
Body Shape
70
70
140 nm
230 nm
Water
Mist
60
60
Grinding Water Supplied to Grinding Point Uniformly LT Wafer
LT Wafer
0
0
Masspower
Conventional Wheel
For Si Bare Wafers
VitaNova Cell ed / V-Heart
For GaN / Sapphire Wafers
VitaNova Masspower
Demonstrates Performance in Si Bare Wafer Grinding
Achieves Mirror-Finish Machining of Hard Materials
It has a bond structure with high porosity and excellent chip evacuation, and achieves both lower load and longer life in the processing of silicon wafers. Features • Bonded structure with high porosity and excellent chip evacuation. • Achieved both Low load and long tool life in rough and semi- nishing of silicon wafers.
The adjustment of the binding grade and bond has enabled grinding of dif cult-to-grind materials with ne grains that have been dif cult to grind with conventional wheels. This wheel ensures high-speed and mirror nishing of GaN wafers.
Features • Grinding of dif cult-to-machine materials. • High-speed and near mirror nishing.
φ 110–200
φ 160–350
Outside Diameter D (mm)
Outside Diameter D (mm)
3 (Cellfied) 3.4 (V-Heart)
Grain Layer Width W (mm)
3
Grain Layer Width W (mm)
Grain Layer Thickness X (mm) 3–10
Spindle Load Current (A)
Wheel Wear (µm/piece)
Grain Layer Thickness X (mm) 5
Grit Size (Grain Size)
#6000–#8000 (1–0.5 µm)
2
8
Grit Size (Grain Size)
#2000–#4000 (7–2 µm)
Approx. 20% Less
Results from Grinding Single-Crystal GaN Wafers GaN Wafer (Ga Surface) 2-inch
Approx. 40% Less
7
GaN Wafer
Sapphire Wafer
4-inch
Comparison with Conventional Products (Cell ed) Wheel Size φ 200-3 W
Sa=1.43 nm
Sa=1.41 nm
Grinding Process
Rough
Finish
Rough
Finish
1
6
Grit Size (Grain Size)
#2000 (7 µm)
#6000 (1 µm)
#2000 (7 µm)
#6000 (1 µm)
Speci cation
SD4000V
Stock Removal (µm)
50–100
10
50–100
10
Workpiece
12-inch Si Wafer
5
Feed Rate (µm/min)
30 60 90
20
30 60 90
20
Machine
Vertical rotary surface grinder
Wear Rate (%)
7 15 27
100
12 20 35
100
Wheel Rotation Speed 1,500 min -1
0
0
Cellfied
Cellfied
Conventional Wheel
Conventional Wheel
ー ー
ー ー
Chuck Rotation Speed 300 min -1
Surface Quality Ra (nm)
90
1–2
100
2
Grain Size 0.5 µm
Grain Size1 µm
5
6
Technical & Reliable Network for A.L.M.T. Corp. ■ Head Of ce
Sumitomo Fudosan Shiodome Hamarikyu Building, 8-21-1, Ginza, Chuo-ku, Tokyo, 104-0061 Japan Phone +81-3-6733-3617 Fax +81-3-6733-3621
Domestic Production Network (Diamond / CBN Tools) ■ Harima Works (Grinding Wheel, Cutting Tool, Rotary Dresser) (Customer Solution Center) 1816-174, Kotaka, Kato-city, Hyogo 679-0221 Japan Phone +81-795-48-5067 Fax +81-795-48-5071 ■ Awaji Plant (Diamond Drawing Dies, Wear-Resistance Products) 628, Yura, Yura-cho, Sumoto-city, Hyogo 656-2543 Japan Phone +81-799-27-0317 Fax +81-799-27-2485
Harima Works
Domestic Sales Network ■ Tohoku Of ce
■ Hamamatsu Of ce
■ Kita-kanto Of ce
■ Osaka Of ce
■ Tokyo Of ce
■ Hiroshima Of ce
■ Mikawa-anjo Of ce
■ Kyushu Of ce
Global Network (Diamond / CBN Tools) <North America> ■ Sumitomo Electric Carbide, Inc. (Chicago) ……(Sales of Diamond Tools) 1001. Business Center Drive, Mt. Prospect, IL 60056-2181, U.S.A. Phone +1-847-635-0044 Fax +1-847-635-9335 ■ Sumitomo Electric Carbide, Inc. (Detroit) …… (Sales of Diamond Tools) 26800 Meadowbrook Road,Suite 120 Novi, MI 48377, U.S.A. Phone +1-734-451-0200 Fax +1-734-451-5338
<Central America> ■ Sumitomo Electric Hardmetal de Mexico. S.A. de C.V. (Mexico)
…… (Sales of Diamond Tools)
Avenida Eugenio Garza Sada No. 42 Pocitos Aguascalientes, Ags., 20328, Mexico Phone +52-449-993-2740 ～ 41
<Asia> ■ A.L.M.T. Diamond Dies (SUZHOU) Co., Ltd. (Suzhou, China)
■ A.L.M.T. Asia Paci c Pte. Ltd. (Singapore)
…… (Sales of Diamond Tools and Diamond Drawing Dies)
…… (Manufacture and Sales of Diamond Drawing Dies) Unit 24E, 25D, 25E of Suchun Industrial Square, #428 Xinglong Street
No.2 Boon Leat Terrace #03-02 Harbourside 2 Singapore 119844 Phone +65-6271-9252 Fax +65-6274-2915 ■ A.L.M.T. Asia Paci c Pte. Ltd. (Malaysia)
Suzhou Industrial Park, Jiangsu, P.R. 215024, China Phone +86-512-62836195 Fax +86-512-62836176 ■ Sumitomo Electric Hardmetal Trading (Shanghai) Co., Ltd.
…… (Sales of Diamond Tools and Diamond Drawing Dies)
8F-1A,Tower 4 @PFCC Jalan Puteri 1/2, Bandar Putei 47100, Puchong,Selangor Malaysia Phone +60-3-8069-1090 ～ 91 Fax +60-3-8069-1094 ■ A.L.M.T. (Thailand) Co., Ltd. (Bangkok, Thailand)
…… (Sales of Diamond Tools) Room J, 6/F Huamin Empire Plaza, No.728 Yan An Road(W), Shanghai, 200050, China Phone +86-21-6212-9271 Fax +86-21-6212-9272 ■ Sumitomo Electric Hardmetal Trading (Shanghai) Co., Ltd. (Guangzou) …… (Sales of Diamond Tools) Room 21, A22F, China Shine Plaza, No.3-15 Lin He Xi Road, Tian He District, Guangzhou, 510610, China
…… (Sales of Diamond Tools and Diamond Drawing Dies) 54 B.B Building 15th Floor Room 1511 Sukhumvit 21 (Asoke), North
Klongtoey Wattana, Bangkok 10110 Thailand Phone +66-2-2612231 ～ 2 Fax +66-2-2612230 ■ A.L.M.T. (Thailand) Co., Ltd. (Wellgrow, Thailand)
Phone +86-20-3881-5582 Fax +86-20-3891-0904 ■ Sumitomo Electric Hardmetal Taiwan Co., Ltd.
…… (Manufacture of Diamond Tools)
90/2 Moo 9 Wellgrow Industrial Estate Bangna-trad Road., T.Bangwua A.Bangpakong Chachoengsao 24180 Thailand
…… (Sales of Diamond Tools) 13F, No.156, Section 1, Zhongshan Rd., Banqiao District, New Taipei City, 22065, Taiwan Phone +886-2-29596721 Fax +886-2-29596720
Phone +66-38-522291 ～ 5 Fax +66-38-522290 ■ A.L.M.T. (Thailand) Co., Ltd. (Korat, Thailand)
…… (Manufacture of Diamond Drawing Dies)
Mooban Bannaklang 567 Moo 1 T.Naklang A.Soongnuen Nakhonratchasima 30380 Thailand Phone +66-44-335190 Fax +66-44-335300
The Customer Solution Center owns dedicated evaluation machines for semiconductor-related wafer grinding, as well as tape mounters, measuring devices, analysis equipment, and various types of dedicated evaluation wheels necessary for processing. We can perform test processing without stopping the customer's production line, so please feel free to contact us if you are interested in solving problems in various wafer grinding processes or tool evaluation testing.
[ All Equipment ] • Various wafer grinding process evaluation equipment (2 to 13- inch)
• Wafer Analysis , Analysis Equipment Zygo Optical Pro lometers & 3D Optical Pro lers “Nexview” TROPEL Surface Form Analysis System “FlatMaster200-Wafer”
Sumitomo Fudosan Shiodome Hamarikyu Building, 8-21-1, Ginza, Chuo-ku, Tokyo, 104-0061 Japan Phone +81-3-6733-3617 Fax +81-3-6733-3621 https://www.allied-material.co.jp/en.html
* Speci cations are subject to change without prior notice.
2024.10 (T) 500
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