For Rough Grinding SiC Wafers
VitaNova Masspower I A
For Finishing SiC Wafers
VitaNova Masspower II B
Contributes to Lower Machining Costs and Higher Machining Ef ciency
Contributes to Improved Machining Ef ciency Through Low-Load, Low-Wear Machining
As diameter of SiC wafers become larger, a demand for lower cost wheels for rough machining of wafer thickness will be required more. The vitri ed bond wheel “VitaNova Masspower I A” fulfills the market requirement of longer wheel life and a significant reduction in production costs by “increased retention” of the abrasive grain layer.
As SiC wafers become larger in diameter, further cost reduction and lower grinding resistance are required for wheels for wafer thickness processing. The vitri ed bond wheel “VitaNova Masspower II B” achieves the market requirements of long life and low grinding resistance by adopting a bond with high porosity and high grain retention. This will contribute to the further spread of SiC power devices. Features • Both 6-inch and 8-inch models have approximately 2.8 times longer tool life than conventional products. • Achieves better grinding with less load in both 6-inch and 8-inch compared with conventional spec. • Low-damage processing equivalent to lapped surfaces is achieved.
Features • Minimize the self-sharpening units to achieve long tool life and low-load processing
• Achieves less wear ratio of grinding wheel in both 6-inch and 8-inch compared with conventional spec. • Continuous machining at a feed rate of 1 µm/sec is achieved for both 6-inch and 8-inch machines.
Standard Speci cation
Standard Speci cation
φ 160–350
φ 160–350
Outside Diameter D (mm)
Outside Diameter D (mm)
D
D
W
W
Grain Layer Width W (mm)
3
Grain Layer Width W (mm)
3
Grain Layer Thickness X (mm) 5–10
Grain Layer Thickness X (mm) 3–10
H
H
Grit Size (Grain Size)
#325–#2400(44–5 µm)
Grit Size (Grain Size)
#6000–#10000 (1–0.3 µm)
Masspower I A Processing Mechanism
Example of SiC Wafer Processing: #8000 (Abrasive Grain Size: 0.5 µm)
Comparison with Conventional Products (Wheel Wear Rate and Spindle Load Current)
Masspower I A
Conventional
6-inch
8-inch
400
120
6
6
100
300
80
4
4
Minimized the Self-Sharpening Units
200
60
Self-Sharpening with Macro Fracture
40
2
2
100
SiC Wafer
SiC Wafer
20
0
0
0
0
Masspower II B Focus on Wear Resistance
Masspower II B Focus on Sharpness
Masspower II B Focus on Wear Resistance
Masspower II B Focus on Sharpness
Conventional Wheel
Conventional Wheel
Masspower II B Wafer Measurement Result After Processing Surface Roughness
Example of SiC Wafer Processing: #2000 (Abrasive Grain Size: 7 µm)
Surface Damage (TEM)
Grinding Distortion (EBSD)
Comparison with Conventional Products (Wheel Wear Rate and Spindle Load Current)
8-inch
6-inch
140
12
35
8
2–3 µm
70 nm
30
120
10
Grinding Masspower II B
7
25
100
8
20
80
6
6
15
60
Sa 1.3 nm
4
10
40
5
2
20
5
0
0
0
4
Masspower I A Feed Rate 1.0 µ ｍ /s
Masspower I A Feed Rate 0.6 µ ｍ /s
Masspower I A Feed Rate 1.0 µ ｍ /s
Masspower I A Feed Rate 0.6 µ ｍ /s
Conventional Wheel Feed Rate 0.6 µ ｍ /s
Conventional Wheel Feed Rate 0.6 µ ｍ /s
Grinding Conventional
4–5 µm
90 nm
Masspower I A Wafer Measurement Result After Processing Surface Roughness
Surface Damage (TEM)
Grinding Distortion (Raman Spectroscopy)
Sa 2.3 nm
7 µm
2–3 µm
Lapping
1 µm
70 nm
Sa 15nm
Sa 0.92 nm
3
4
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