Semiconductor, Electronics／Silicon・MEMS
Silicon
Silicon
For Finishing Si Wafers / VitaNova Premium
For Si Bare Wafers / VitaNova V-Heart
Contributes to Improvement of Yield Ratio Through Low-damage Processing Ultra fine diamond grit and Ultra fine ceramics revolutionized the conventional wisdom of grinding wheels. Application of both acquired material technology and production technology has allowed Ultra fine grinding. Its effectiveness to reduce grinding damage in layers of brittle material such as polish-reduction of 12-inch silicon wafer and prevent cracks on a thin layer device wafer.
・Realizes high efficiency and low load process ・V-shape that allows optimum diamond grain spacing ensures long lasting sharpness. ■Features Low grinding forces possible with high porous structure and abrasive layer shape characteristic. Damage depth is reduced, making it possible for high quality / high precision continuous grinding. Ideal for Rough Grinding of Si Wafers
・Rough grinding of Si wafers ■Applications
・Extremely flat, low damage, and smooth grinding possible. ・Grinding of 12-inch silicon wafers as thin as 3 µm is possible. ・Polished surface quality equivalent to polishing is possible. ■Features ・Ultra-precision surface grinding of various semiconductor wafers ■Applications
Grinding Force is 1/10 of Resin Bonding Wheel
Grinding Force
Grinding Force
Resin
High
Resin Bond
Special Metal
12-inch Si Wafer / Comparison Data by Grain Size
Grain Size
VitaNova
Relation Between Grit Size and Surface Wafer
VitaNova V-Heart
1 µm
0.5 µm
PV(nm) High Precision Surface Grinder Ra(nm)
PV(nm) Ra(nm) General Purpose Surface Grinder
Sa: 2.8 nm PV: 22 nm
Sa: 1.5 nm PV: 12 nm
Low
Increase
Process Quantity
Continuous Grinding
Surface Roughness
10 20 30 50 40
10
Grit Size (Grain Size)
♯2000 （7 µm）
♯3000 （3 µm）
♯4000 （2 µm）
2 4 6 8 0
ＭＥＭＳ
For MEMS Wafers / VitaNova Premium
Surface Damage Depth
0
♯3000 （3 µm）
＃6000 （1 µm）
♯8000 （0.5 µm）
MEMS substrate silicon wafers that easily break due to a cavity in the silicon / glass substrate can be ground without cracks. Low-Load Grinding Without Cracks
230 nm
140 nm
Grit Size (Grain Size)
For Si Bare Wafers / VitaNova Cellfied
・No cracks thanks to low-load grinding. ・Continuous grinding of through holes and deep wafers. ■Features
It has a bond structure with high porosity and excellent chip evacuation, and achieves both lower load and longer life in the processing of silicon wafers. Demonstrates Performance in Si Bare Wafer Grinding
・Micro sensors (acceleration), Ink jet printers, etc. MEMS substrate grinding ■Applications
■MEMS Grinding Problem Solving
・Achieves both low load processing and long life ■Features ・Thickness processing of Si bare wafers ■Applications
Problems of MEMS Grinding When grinding the silicon wafer, breaks occur in the hollow layer in the silicon or glass substrate.
Silicon Substrate Thickness 50 µm
■Machining Examples □Comparison with Conventional Wheel (VitaNova V-Heart)
Silicon wafer grinding has become possible by softening the binding grade to the limit.
1） 2） 3） 4） 5）
Machine Wheel Specification Workpiece Coolant Conditions
Vertical Axis Rotary Surface Grinder ①Conventional Wheel ②VitaNova Cellfied φ200-3W #4000（2 µm） 12-inch Silicon Wafer City Water Wheel Rotation Speed：1,500 min -1 Chuck Rotation Speed：300 min -1 Spark Out : 5 sec
Crack
Cavity
Silicon or Glass Substrate
High Pressure
Low Pressure
Cavity
Cavity
Spindle Load Current
Wheel Wear Rate
7 9 8 6 4 5
2
Approx. 20% Less
1.5
Approx. 40% Less
1 0.5
Crack
0
MEMS (Micro Electro Mechanical Systems)
VitaNova Premium (Grain Size1 µm)
Conventional Wheel
Conventional Wheel
Conventional Wheel
VitaNova Cellfied
VitaNova Cellfied
047
048
Made with FlippingBook flipbook maker