THz Spectroscopy White Paper Nov 2017

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Non-d plasm wafer Titanium ni technology resistant co Traditionally coverage in structures. Atomic laye thickness, e films of TiN tetrakis (dim Nevertheles required. Id surface cov demonstrate wafers usin Equipme In this work and a N 2 /H 2 https://www films were d precursor d

estru a ato s usin tride (TiN) as it has low ating, and TiN was de deep conta r deposition xcellent uni by ALD has ethylamino) s, optimizat eally, non-d ered by the a non-des g THz Spect nt and pro , TiN layers w mixed plasm .oxford-instr eposited on elivered to th

ctive mic la g THz is used as resistivity a barrier lay posited usi cts and via been repo titanium (Ti ion of film estructive c deposition c tructive elec roscopy. cess ere deposit a in the Ox uments.com 200 mm Si( e reaction c (ALD) is a formity, and

electr yer de spec a metal ga nd is compa er for copp ng physical trenches d thin film dep conformal c rted using v (N(CH 3 ) 2 ) 4 , T growth and haracterisat an be done trical charac

ical ch posit trosco te in comp tible with ga er diffusion vapour depo ue to the sh osition tech oating of hi arious precu DMAT). 2, 4, 5 the electri ion of thickn

aract ed TiN py lementary te dielectric due to it sition techn adowing eff nique which gh aspect ra rsors such a cal propertie ess and ele he quality o plasma ato

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metal-oxide- s. 1 TiN is a s chemical iques which ects especi allows for Å tio features s titaniumte s and thei ctrical unifo f the final fil mic layer de

semiconduc lso deposite and therm suffer from ally in high -level contro . The depos trachloride r uniformitie rmity acros m. This whit posited TiN

tor (CMOS) d as a wear al stability. 2 a poor step aspect ratio l of the film ition of thin (TiCl 4 ), 3 and s are often s the entire e paper will on 200 mm

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