Process News Autumn 2016 | OI Plasma Technology

PROCESS NEWS

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A Newsletter from Oxford Instruments Plasma Technology

IN THIS ISSUE 2 Recent advances in SiC via etch process for RF device manufacture 3 High quality MoS 2 CVD growth process developed 4 In-situ plasma pre-treatments on GaN surfaces for reduction of interface traps in metal-oxide- semiconductor capacitors & high electron mobility transistors using ALD Al 2 O 3 6 Precision 3-D nanomachining of silicon nanowires 8 One dimensional contacts to a 2D material 9 Plasma ALD of SiO 2 , NiO and HfO 2 on the FlexAL: Modifying Flow, Pressure and Plasma Parameters 10 Resistance repeatability study of ion-beam deposited vanadium oxide thin films 11 Prestigious Nanjing University orders several plasma systems 11 We’d like to introduce our new MD, Richard Pollard 12 Optical emission monitoring for optimisation of atomic layer etch (ALE) processes 13 ICP CVD advanced plasma cleaning 14 Providing process and system solutions for the growing BioMEMS market 15 Oxford Instruments' systems now facilitate water purification technology 16 Watch our informative webinars

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